Poster: Crystal Structures of Co1-xFexTiSb compounds
Authors: Götz Schuck, Jorge L. Gavilano, Denis Sheptyakov, Jürg Schefer, H. R. Ott, Z. FiskConference: Jahrestagung der Deutsche Gesellschaft für Kristallographie 2008, March 3-6, Erlangen, Germany , PDF
CoTiSb belongs to the family of half-Heusler compounds [1] which have the general form XYZ, with X and Y transition metals and Z an sp electron metal. These materials are thought to have the MaAgAs type structure, derived from the general Heusler structure (X2Y Z) by leaving every other X site vacant. The latter is thought to lead to unusual electronic properties, including the so-called half-metallic ferromagnetism with a 100% polarized electronic band responsible for the metallic conduction [2]. In addition, the ferromagnetism in this series has been claimed to be associated with a metal to semiconductor transition [3]. All this makes the half metallic ferromagnets of this family good candidates for potential applications involving spin-polarized transport (spintronics) [4]. The CoxFe1-xTiSb samples for this investigation (x = 0, x = 0.015 and x = 0.05) have very different transport properties what is shown in Figure 1 were the normalized dc-resistances R(T)/R(300 K) of Ref. [3] is displayed.
Figure 1: Normalized dc-resistances R(T)/R(300 K) of Ref. [3]
According to electronic band structure calculations [4], should be a paramagnetic semiconductor with an energy gap of the order of 1 eV. However, the situation is complicated because the results are very sensitive to which elements occupy the X, Y and Z positions (Fig. 2) in the structure [5]. For instance, CoTiSb ought to be a nonmagnetic semimetal, and TiCoSb a ferromagnetic metal. Although this claim obtained some support from measurements on a polycrystalline sample of CoTiSb, it was seriously questioned by recent work on single crystals of CoTiSb [6,7]. In fact none of the above possibilities matched the experimental results. In addition it was found that replacing a small amount (5 %) of Co by Fe strongly reduces the low temperature electrical conductivity, by nearly 2 orders of magnitude. This clearly shows that the sample is close to a metal-semiconductor instability. In addition the properties of CoTiSb are sensitive to details of the annealing of the sample.
Figure 2
For all three samples (x = 0, x = 0.015 and x = 0.05) neutron single crystal measurements on TriCS (PSI) and X-ray single crystal measurements on BM1A beamline (SNBL/ESRF) each at 100 K has been carried out. Presented are preliminary refinement results on the joint refinement on the neutron- and the X-ray datasets, with a new beta-version of the JANA2006 software [8].
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